? 2000 ixys all rights reserved 1 - 4 symbol test conditions maximum ratings vub 120 vub160 v rrm 1200/1600 1200/1600 v i davm t c = 75 c, sinusoidal 120 121 157 a i fsm t vj = 45 c, t = 10 ms, v r = 0 v 650 850 a t vj = 150 c, t = 10 ms, v r = 0 v 580 760 a i 2 t t vj = 45 c, t = 10 ms, v r = 0 v 2110 3610 a t vj = 150 c, t = 10 ms, v r = 0v 1680 2880 a p tot t c = 25 c per diode 130 160 w v ces t vj = 25 c to 150 c 1200 1200 v v ge continuous 20 20 v i c25 t c = 25 c, dc 100 150 a i c75 t c = 75 c, dc 71 106 a t c = 75 c, d = 0.5 56 85 a i cm t p = pulse width limited by t vjm 200 300 a p tot t c = 25 c 400 600 w v rrm 1200 v i fav t c = 75 c, rectangular d = 0.5 25 a i frms t c = 75 c, rectangular d = 0.5 39 a i frm t c = 75 c, t p = 10 s, f = 5 khz tbd a i fsm t vj = 45 c, t = 10 ms 200 a t vj = 150 c, t = 10 ms 180 a p tot t c = 25 c 100 w t vj -40...+150 c t vjm 150 c t stg -40...+125 c v isol 50/60 hz t = 1 min 3000 v~ i isol 1 ma t = 1 s 3600 v~ m d mounting torque (m5) 2-2.5 nm (10-32 unf) 18-22 lb.in. d s creep distance on surface 12.7 mm d a strike distance in air 9.4 mm a maximum allowable acceleration 50 m/s 2 weight typ. 80 g v rrm type v rrm type v v 1200 vub 120-12 no1 1600 vub 120-16 no1 1200 vub 160-12 no1 1600 vub 160-16 no1 igbt fast recovery diode module rectifier diodes features soldering connections for pcb mounting isolation voltage 3600 v~ ultrafast diode convenient package outline ul registered e 72873 case and potting ul94 v-0 thermistor applications drive inverters with brake system advantages 2 functions in one package easy to mount with two screws suitable for wave soldering high temperature and power cycling capability dimensions in mm (1 mm = 0.0394") vub 120 / 160 preliminary data 0 31 data according to iec 60747 ixys reserves the right to change limits, test conditions and dimensions. v rrm = 1200/1600 v i davm = 121/157 a three phase rectifier bridge with igbt and fast recovery diode for braking system
? 2000 ixys all rights reserved 2 - 4 i r v r = v rrm ,t vj =25 c 0.3 ma v r = v rrm ,t vj = 150 c5ma v f i f = 150 a, t vj =25 c vub 120 1.59 v vub 160 1.49 v v t0 for power-loss calculations only vub 120 0.80 v vub 160 0.75 v r t t vj = 150 c vub 120 6.1 m vub 160 4.6 m r thjc per diode vub 120 1.0 k/w vub 160 0.8 k/w r thjh vub 120 1.3 k/w vub 160 1.1 k/w v br(ces) v gs = 0 v, i c = 3 ma 1200 v v ge(th) i c = 20 ma vub 120 58v i c = 30 ma vub 160 58v i ces t vj = 25 c, v ce = 1200 v vub 120 0.8 ma vub 160 1.2 ma t vj = 125 c, v ce = 0,8 ? v ces vub 120 3ma vub 160 4.5 ma v cesat v ge = 15 v, i c = 50 a vub 120 2.9 v v ge = 15 v, i c = 75 a vub 160 2.9 v t sc v ge = 15 v, v ce = 720 v, t vj = 125 c, (scsoa) r g = 11 non repetitive vub 120 10 s r g = 7 , non repetitive vub 160 10 s rbsoa v ge = 15 v, v ce = 960 v, t vj = 125 c, clamped inductive load, l = 100 h r g = 11 vub 120 100 a r g = 7 vub 160 150 a c ies v ce = 25 v, f = 1 mhz, v ge = 0 v vub 120 9nf vub 160 13.5 nf t d(on) 300 ns t d(off) 350 ns e on vub 120 12 mj vub 160 18 mj e off vub 120 16 mj vub 160 24 mj r thjc vub 120 0.32 k/w vub 160 0.21 k/w r thjh vub 120 0.45 k/w vub 160 0.30 k/w i r v r = v rrm , t vj = 25 c 0.75 ma v r = 0,8 v ces , t vj = 125 c47ma v f i f = 30 a, t vj =25 c 2.55 v v t0 for power-loss calculations only 1.65 v r t t vj = 150 c 18.2 m i rm i f = 30 a, -di f /dt = 240 a/ s, v r = 540 v 16 18 a t rr i f = 1 a, -di f /dt = 100 a/ s, v r = 30 v 40 60 ns r thjc 1.2 k/w r thjh 1.6 k/w r 25 siemens s 891/2,2/+9 2.2 k symbol test conditions characteristic values (t vj = 25 c, unless otherwise specified) min. typ. max. rectifier diodes fast recovery diode v ce = 720 v, i c = 50/75 a v ge = 15 v, r g = 11/7 inductive load; l = 100 h t vj = 125 c igbt vub 120 / 160 rectifier diodes ntc
? 2000 ixys all rights reserved 3 - 4 r g 0.9 1.0 1.1 1.2 1.3 04080120160 0 20 40 60 80 100 120 140 0.0001 0.001 0.01 0.1 1 10 0 50 100 150 200 -50 -25 0 25 50 75 100 125 150 0.50 0.75 1.00 1.25 1.50 02468 0 50 100 150 200 w i c norm. v a t c i d(av)m c v ce(sat) t vj i c v ce a 020406080100120 0 50 100 150 200 250 300 p tot i d(av)m a w t a v ge = 15v t vj = 25 c i c = 50a e off t fi s t vj =125 c i c = 25a norm. to 4.7 w 0 40 80 120 160 c r thka [k/w] 0.1 0.3 0.5 0.7 1 1.5 3 v ge = 11v v ge = 9v a d=0.1 d=0.2 d=0.4 c i c = 25a i c = 100a e off t fi a norm. e off t fi e off t fi t p t v j =125 c r g = 4.7 w norm. v ge = 15v t k = 80 c d=0.5 under evaluation under evaluation v ge = 13v d=0.3 i c vub 120 d=0.7 fig. 3 output characteristics for fig. 4 temperature dependence of fig. 5 turn-off energy per pulse and braking (igbt) output saturation voltage, fall time in collector current, normalized (igbt) normalized (igbt) vub 120 fig. 6 collector current dependence on pulse width and duty cycle (igbt) fig.7 turn-off energy per pulse and fall time on r g (igbt) fig. 1 power dissipation versus direct output current and ambient temperature fig. 2 maximum forward current (rectifier bridge) versus case temperature (rectifier bridge)
? 2000 ixys all rights reserved 4 - 4 1 10 100 1000 0 1 2 3 4 5 6 01234 0 10 20 30 40 50 -di f /dt 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 100 200 300 400 500 600 0 10 20 30 40 50 0 100 200 300 400 500 600 0.0 0.2 0.4 0.6 0.8 1.0 0 40 80 120 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 400 800 1200 0.1 1 10 100 k f z thjk t -di f /dt t vj c t rr m s 0 100 200 300 400 500 600 0 10 20 30 40 50 60 70 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v fr m c v ce i c a v f i f i rm a q r v a/ m s v per rectifier diode fast diode igbt i f = 30 a i f = 60 a i f = 30 a i f = 15 a v -di f /dt a/ m s s v fr t fr t fr m s q r t v j =100 c v r = 540 v t v j =125 c r g = 11 w a max. i rm t v j =100 c v r = 540 v -di f /dt typ. max. t v j =100 c v r = 540 v t v j =150 ct v j =25 c typ. max. t v j =125 c i f = 30a typ. a/ m s i f = 30 a i f = 60 a i f = 30 a i f = 15 a i f = 30 a i f = 60 a i f = 30 a i f = 15 a 200 a/ m s vub 120 k/w fig. 8 reverse baised safe operation fig. 9 forward current versus fig. 10 recovery charge versus area (igbt) voltage drop (fast diode) -di f /dt (fast diode) fig.11 peak forward voltage and fig.12 recovery time versus -di f /dt fig.13 peak reverse current versus recovery time versus -di f /dt (fast diode) -di f /dt (fast diode) (fast diode) fig.14 dynamic parameters versus fig.15 transient thermal impedance junction to heatsink z thjk junction temperature (fast diode) vub 120
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